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CAS No. 12064-03-8 | GALLIUM ANTIMONIDE

Name: GALLIUM ANTIMONIDE CAS No.12064-03-8 MF:GaSb MW:191.48 Purity:99% Package: 10g,25g,50g,100g,250g Worldwide Delivery

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Photoelectric Materials

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Product introduction

Introduction and application of CAS No. 12064-03-8 | GALLIUM ANTIMONIDE

Synonyms:antimony,compd.withgallium(1:1);

GALLIUMANTIMONIDE;

GALLIUMANTIMONIDEPIECES-6MESH&;

Galliumantimonide,singlecrystalsubstrate(100);

GALLIUMANTIMONIDE,99.999%;

GalliumAntimonide99.99%;

Galliumantimonide,99.99%(metalsbasis);

Galliumantimonide,99%(metalsbasis)

Specification:

ITEMS	SPECIFICATION
CAS	12064-03-8
MF	GaSb
MW	191.48
Melting point	710 °C -980 °C
Density	5.62 g/mL at 25 °C (lit.)
Color	Brown cubic crystals, crystals
Solubility	Insoluble in water.
Form	Flaky
Craystal structure	Cubic, Sphalerite Structure - Space Group F(-4)3m

application:

Gallium Antimonide (GaSb) is a III-V compound semiconductor that is a sphalerite and direct band gap material. Its bandgap width is 0.725eV (300K) and its lattice constant is 0.60959nm. GaSb has excellent physical and chemical properties and is often used as a substrate material for infrared detectors and lasers of 8~14mm and larger than 14mm. In addition, Te-doped GaSb can be used to prepare thermophotovoltaic devices, laminated solar cells and microwave devices with high photoelectric conversion efficiency.

production method:

Put 20g of gallium and 34.94g of antimony into a graphite plate and put it into a quartz tube. After fully replacing the air with a hydrogen flow, heat the quartz tube to 720~730°C in the hydrogen flow to combine. In order to obtain a GaSb single crystal, it can be slowly taken out from the quartz tube, so that the molten GaSb solidifies from one end of the disk to form a crystal. If you want to make GaSb for semiconductors, the raw material disks and quartz tubes used should be high-purity products, and regional melting and purification can be carried out if necessary.

Package and transportation :

Package: 10g,25g,50g,100g,250g